• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    Differential pressure measuring sensor MEMS and / or NEMS comprising at least a first membrane (4) and at least a second membrane (6), each (4, 6) suspended on a substrate (2), the first membrane (4) having a face (4.1) subjected to a reference pressure and a second face (4.2) subjected to a first pressure to be detected, the second membrane (6) having a first face (6.1) subjected to the reference pressure and a second face (6.2) subjected to a second pressure to be detected, a rigid beam (8) of longitudinal axis (X) hinged to the substrate by a pivot connection about an axis (Y), said beam (8) being secured by a first zone to the first membrane (4) and a second zone to the second membrane (6) so that the pivot connection is between the first zone and the second zone of the beam (8), means for measuring the displacement of the beam (8) about the axis (Y), said measuring means and disposed at least partially on the substrate.
    公开号:FR3018916A1
    申请号:FR1452288
    申请日:2014-03-19
    公开日:2015-09-25
    发明作者:Philippe Robert；Bernard Diem；Guillaume Jourdan
    申请人:Commissariat a lEnergie Atomique CEA；Commissariat a lEnergie Atomique et aux Energies Alternatives CEA；
    IPC主号:
    专利说明:

    [0001] TECHNICAL FIELD AND PRIOR ART The present invention relates to a microelectromechanical and / or nanoelectromechanical differential pressure measuring sensor. A differential pressure measuring sensor makes it possible to measure a difference between two pressures, the two pressures being arbitrary. In the field of microelectronics and nanoelectronics there are several types of differential pressure measuring sensor. J. Micromech. Microeng. 22 (2012) 055015 - H Takahashi et al. discloses a piezoresistive-sensing cantilever beam for measuring the pressure difference between the two sides of the beam. A pressure difference induces a deflection of the beam which is measured by means of a piezoresistive gauge, the variation of electrical resistance is proportional to the pressure difference. This sensor is of relatively simple structure, nevertheless because of the realization of the beam both sides at different pressures are in communication. In order to limit leakage between the two sides of the beam, nano-sized air gaps are made, but there is still a leak between the two sides of the beam. In addition, the piezoresistive gauge or gauges are in contact with the gas or the liquid coming into contact with the beam. This sensor can therefore pose reliability problems. Finally, this embodiment requires making pressure inputs on both sides of the beam, which can make the assembly complex.
    [0002] In order to avoid the presence of a leak between the two sides of the sensitive element, differential pressure sensors use a waterproof membrane. For example, the document Capacitive differential pressure sensor for harsh environments "ST Moe & Al., Sensors and Actuators 83 (2000), pp30-.33 describes a capacitive differential pressure measuring sensor comprising a stack of three substrates. membrane, which deforms under the effect of a differential pressure between its two faces.The membrane forms with the intermediate substrate a capacitor with variable capacitance, the measurement of this capacity makes it possible to determine the differential pressure. is insensitive to the differential pressure makes it possible to compensate the capacitance variations caused by the ambient pressure and the temperature variations.This sensor is of complex realization because of the stacking of the three substrates. contact with one of the fluids whose pressure is detected.Thus, in the case of a liquid, it can cause r a short circuit between the two plates of the capacitor. P.D. Dimitropoulos et al. Sensors and Actuators A 123-124 (2005) 36-43 discloses a differential pressure measuring sensor employing two membranes delimiting in them a sealed cavity. One face of each membrane is subjected to a pressure, the differential pressure between the two faces of the sensor induces a deflection of the two membranes. The two membranes form a capacitor with variable capacity, the measurement of this capacity makes it possible to determine the pressure between the two faces. This sensor has the advantage that the capacitor with variable capacity is protected from the external environment. On the other hand, this pressure measurement sensor measures the sum of the pressures applied on the two membranes and not the difference between the pressures applied on each of the membranes. In addition, the two membranes are distinct since they are not from the same layer and are made in different stages. They can then have different sensitivities and different variations with respect to external disturbances, such as temperature, vibrations, etc. The accuracy of the sensor is thus reduced. In addition, this sensor imposes pressure inputs on both sides of all the two membranes. SUMMARY OF THE INVENTION It is therefore an object of the present invention to provide a differential pressure measuring sensor of simple and robust construction. The object of the present invention is achieved by a differential pressure measuring sensor comprising a first membrane subjected to a first pressure on one face and a reference pressure on another face, a second membrane subjected to a second pressure on one face and at the reference pressure on another face and a beam connecting the two membranes on the side of the faces subjected to the reference pressure, the beam being hinged on a support by a pivot connection, and measuring means sensitive to the displacement of the beam caused by the difference in pressure seen by the two membranes. The sensor offers great robustness since the measuring means are isolated in the cavities at reference pressures, they are not in contact with the external environment. The risks of short circuit and / or corrosion are avoided. In addition it allows taking the same reference pressures for both membranes, to measure the differential pressure directly. Indeed, the implementation of the beam makes it possible to cancel the static pressure in the measurement and thus to directly supply a differential pressure value. The sensor according to the invention thus has an advantage in terms of measurement dynamics with respect to the differential pressure sensors using absolute pressure sensors.
    [0003] In other words, an intermediate element is used which undergoes the thrust forces of each of the membranes, because of its judicious articulation with respect to the substrate, its rotational displacement corresponds to the difference of the thrust forces undergone. by the membranes. By measuring the rotational displacement of the intermediate element, it is possible to deduce the differential pressure therefrom. The implementation of the beam can advantageously benefit from a lever arm effect to increase the sensitivity of the sensor. Indeed, in the case of strain gauge detection means connected to the axis of rotation of the beam, the thrust force applied by each membrane to the beam is amplified, it then results in an amplified displacement of the beam. and an amplified constraint to the gauge (s). The sensor then has an increased sensitivity. The longitudinal ends of the beam are in permanent contact with the membranes. They can be secured to the membranes by a rigid or flexible connection or be in "sliding" contact with the membranes. In addition to the implementation of this articulated beam and subjected to the thrust forces of the two membranes, a differential capacitive measurement can easily be implemented, unlike other capacitive detection differential pressure measuring sensors. Very advantageously, the two membranes have identical structures and are produced simultaneously. They then have similar sensitivities, even identical and undergo the same variations to external disturbances, such as temperature variations, vibrations. The sensor can then offer high accuracy. The sensor according to the invention can be easily produced in surface technology, and can then be co-integrated with inertial sensors produced by surface technology.
    [0004] The subject of the present invention is therefore a differential pressure measuring sensor MEMS and / or NEMS comprising at least a first membrane and at least a second membrane, each suspended on a substrate, the first membrane having a face subjected to a reference pressure. and a second face subjected to a first pressure to be detected, the second membrane having a first face subjected to the reference pressure and a second face subjected to a second pressure to be detected, a rigid beam with a longitudinal axis articulated with respect to the substrate by a pivot connection about an axis, said beam being in contact by a first zone with the first membrane and a second zone with the second membrane so that the pivot connection is between the first zone and the second zone of the beam means for measuring the displacement of the beam about the axis, said measuring means being arranged at least partly on the subsurface trat. The membranes are arranged on the same face of the substrate. They may be arranged in the same plane or in different planes, in particular in case of thinning or thickening of one of the membranes, for example by the deposition of an additional layer. The sensor may comprise a cap delimiting with the substrate on the side of the first faces of a first and second membranes at least one hermetic cavity. Preferably, the measuring means are arranged in the cavity or cavities. The axis of rotation can be located in the center of the beam and the first and second contact areas between the beam and the first and second membranes respectively are then advantageously equal distances from the axis of rotation. Preferably, the contact between the beam and the membranes takes place in the vicinity of the center of the membranes, where the deformation of the membranes is maximum.
    [0005] The beam can be secured to the membranes or in sliding contact with them at the contact zones. The first membrane and the second membrane advantageously have the same thickness and the same surface. The beam may be secured to the first and / or second membrane by a flexible connection along the longitudinal axis of the beam and rigid along an axis of deformation of the first and / or the second membrane. In an exemplary embodiment, the pivot connection is made by at least one beam parallel to the axis of rotation and biased. In another embodiment, the pivot connection is made by at least one beam parallel to the longitudinal axis and biased in bending. It may be envisaged to make the pivot connection by combining a torsion connection having one or two beams biased in torsion and a bending connection comprising one or two beams biased in bending. According to an additional characteristic, the sensor may comprise means for stiffening the first membrane and / or the second membrane, for example formed by zones of excess thickness on the first membrane and / or the second membrane, for example arranged radially or in a nest. 'bee. The sensor may comprise several first membranes subjected to the first pressure, and / or several second membranes subjected to the second pressure, the beam being in contact with the first membranes and the second membranes. The sensor may advantageously comprise at least one stop disposed facing the first membrane and / or the second membrane, opposite the face of the first membrane and / or the second membrane subjected to the pressure to be detected so that to limit the deformation of the first membrane and / or the second membrane. The stop may be connected to an electrical connection, the stop may thus serve as an operating electrode, for example to perform a self-test and / or electrode to put the stop at the same potential as the membrane and thus to avoid short-circuits in case of pressure shock and / or polarization electrode to obtain a negative stiffness effect, in order to reduce the stiffness of the system and increase its sensitivity. The measuring means may comprise at least one suspended strain gauge connected at one end to the substrate by an anchor pad and secured to the beam in the vicinity of the axis of rotation so that a rotational movement of the beam around the axis of rotation applies a stress to said gauge, said gauge having an axis disposed below or above the axis of rotation. This configuration can be advantageously obtained by thinning the gauge or gauges, for example the gauge or gauges have a thickness less than or equal to half the thickness of the pivot axis. Preferably, the measuring means comprise two strain gages on each side. else of the longitudinal axis of the beam. In one exemplary embodiment, the strain gauge (s) is or are, for example, piezoresistive gauges, advantageously made of piezoresistive material. In another exemplary embodiment, the strain gauge or gauges is or are resonant gages and the measuring means comprise means for exciting the resonant gauge and means for measuring the vibration variation of the resonant gage.
    [0006] In another embodiment, the measuring means are capacitive measuring means. The capacitive measuring means may comprise two pairs of electrodes, a first pair comprising a fixed electrode and a moving electrode facing each other, the moving electrode being carried by the beam, and a second pair comprising a fixed electrode and a movable electrode. the mobile electrode being carried by the beam in an area opposite the zone carrying the movable electrode of the first pair with respect to the axis of rotation. As a variant, the capacitive measuring means may comprise two pairs of electrodes, a first pair comprising a fixed electrode and a moving electrode facing each other, the mobile electrode being carried by the first membrane and the fixed electrode being carried by a stop facing the first membrane, and a second pair comprising a fixed electrode and a moving electrode opposite, the moving electrode being carried by the second membrane and the fixed electrode being carried by the abutment opposite the second membrane. One or more electrical contacts may be made in the cavity or cavities, and one or more electrical connections connected to the (x) electrical contacts of type via through are made through the cover. One or more electrical contacts may be made partly in the cavity or cavities and partly outside the cavity or cavities, and one or more electrical connections are connected to the (x) electrical contacts outside the or the cavities. The present invention also relates to a set MEMS and / or NEMS comprising at least one differential pressure measuring sensor according to the invention and at least one inertial sensor made on and in the same substrate. The subject of the present invention is also a device for measuring differential pressure comprising at least one differential pressure measuring sensor according to the invention and a housing in which the differential pressure measuring sensor is mounted, said housing comprising two pressure taps. each of which connects each of said differential pressure measuring sensor so that a pressure tap opens on the second face of the first membrane and the other pressure tap opens on the second face of the second membrane.
    [0007] In an exemplary embodiment, the two pressure taps may be on one side of the housing. In another embodiment, the two pressure taps are on two sides of the housing, opposite to the pressure sensor. The pressure to which one of the membranes is subjected arrives laterally, via the gap formed by the thickness of the sealing bead (at least partially open) and / or via a space etched in the substrate. BRIEF DESCRIPTION OF THE DRAWINGS The present invention will be better understood with the aid of the following description and the appended drawings in which: FIGS. 1A and 1B are views from above and in section along the line AA respectively of FIG. an exemplary embodiment of a piezoresistive strain gage detection differential pressure sensor according to the invention; FIG. 1C is a diagrammatic representation of a detail of the excitation resonant suspended strain gage measuring means; capacitive and piezoresistive measurement of the resonance of the gauge, - Figure 1D is a schematic representation of a detail of the resonant suspended strain gage measuring means with capacitive excitation and capacitive resonance measurement, - Figures 2A and 2B are views from above and in longitudinal section along the line BB respectively of an exemplary embodiment of a pressure sensor di According to the invention, FIG. 3 is a top view of an exemplary embodiment of a pressure measurement sensor comprising a flexible articulation along the X axis and rigid along the Z axis between the membranes and beam. FIG. 4 is a top view of an exemplary embodiment of a differential pressure measuring sensor in which the pivot axis of the beam is eccentric and the membranes have different diameters, FIGS. 5A and 5B are views from above and in section along the line CC respectively of another embodiment of a differential pressure measuring sensor comprising stops, - Figure 5A 'is a top view of a variant of the sensor of FIG. 5A in which the pivot connection comprises a single torsionally stressed beam, - FIG. 6 is a top view of an exemplary embodiment of a differential pressure measuring sensor in which the pivot axis is obtained by Beams working in flexion, - Figures 7A and 7B are top views and in section along the line DD respectively of another embodiment of a differential pressure measuring sensor with a first embodiment 8A and 8B are views from above and in section along the line EE respectively of another exemplary embodiment of a differential pressure measuring sensor with a second embodiment of the electrical contacts. FIG. 9 is a view from above of another embodiment of a strain gauge detection differential pressure measuring sensor in which several membranes are used to detect each pressure; FIG. FIG. 11 is a longitudinal sectional view of an assembly of a second embodiment of a strain gauge detection differential pressure measuring sensor having stiffening elements of the membranes for limiting parasitic deformations; integrating a differential pressure measuring sensor according to the invention with and an inertial sensor, FIG. 12 is a longitudinal sectional view of Another example of a sensor according to the invention with simplified housing mounting, - Figures 13A and 13B are longitudinal sectional views of an example of assembly in a housing of a differential pressure measuring sensor according to the invention. FIGS. 14A to 14H are views from above and in longitudinal section of various steps for producing a pressure measuring device according to an exemplary embodiment method. DETAILED DESCRIPTION OF PARTICULAR EMBODIMENTS In the following description, the sensors are of the MEMS and / or NEMS type, however they will be designated solely by the term "sensor" for the sake of simplicity. Elements and parts having the same function and the same shape will be designated by the same references. The differential pressure measuring sensor is intended to measure the pressure difference between pressures P1 and P2.
    [0008] In FIGS. 1A and 1B are views from above and in section respectively of an exemplary embodiment of a differential pressure measuring sensor, comprising a substrate 2, two distinct membranes 4, 6 suspended on the substrate. Each membrane 4, 6 is such that it deforms under the action of a pressure difference on both sides. In the example shown, the membrane 4 is subjected on one of its faces 4.1 to a reference pressure REF and on the other of its faces 4.2 to the pressure P1.
    [0009] The membrane 6 is subjected on one of its faces 6.1 to the reference pressure REF and on the other of its faces 6.2 to the pressure P2. In the example shown, the two membranes are subjected to the same reference pressure. But a sensor with different reference pressures is not beyond the scope of the present invention. In the example shown, a gas-tight cavity 14 is provided in which the reference pressure PREF prevails. In the example shown, the membranes 4, 6 have the shape of a disk but they could have any other shape, such as a square shape, hexagonal ... They could also have different shapes from each other. Preferably, the membranes are planar, preferably coplanar and preferably are of the same thickness. An X-axis beam 8 is hinged about a Y-axis pivot link 10 on the substrate. The Y axis is in the example shown perpendicular to the X axis. In the example shown, the beam is of rectangular section but it could be trapezoidal section for example. In the example shown, the pivot connection 10 comprises two beams 10.1, 10.2 each connecting a lateral edge of the beam 10 to an anchor pad advantageously forming an electrical contact 18. The two beams are aligned along the Y axis The beams 10.1, 10.2 are urged in torsion about the Y axis. The pivot connection may comprise a single torsionally stressed beam as will be described below. The beam 8 is secured by each of its longitudinal ends 8.1, 8.2 to the face 4.1, 6.1 of the membrane 4, 6 respectively. The beam rigidly connects the two membranes in comparison with the stiffness of the membranes. It can be envisaged that the beam is secured to the membranes 4, 6 at an intermediate zone at its longitudinal end and the axis of rotation Y.
    [0010] We will see that in the case of strain gauge measuring means, the greater the distance between the points of application of the forces on the beam and the axis of rotation Y, the greater the sensitivity. In the present application, the term "substrate" for the sake of simplification, the support substrate 2 and the layers disposed on this support substrate such as for example the layer or layers in which the membranes and the beam are formed 8. A cover 12 is assembled on the substrate 2 on the side of the beam and defines with the substrate and the membranes the sealed cavity 14 in which is established the reference pressure REF. In the case where each of the membranes would be subjected on one face to a different reference pressure, the cover 12 delimit two hermetic cavities with each membrane and the substrate. Advantageously, the cover 12 is sealed on the vacuum substrate by sealing, for example by eutectic, anodic, molecular seals or SDB ("Silicon Direct Bonding" in Anglo-Saxon terminology), molecular seals or SBD using the forces and van der Waals forces), .., which provides a good quality of vacuum, which is more reliable for example compared to a plugging by deposit. In addition, this embodiment of the cavity or cavities directly by sealing the cover makes it possible to insert a getter material in the reference cavity (s), for example in the case where it is desired to have a high reference vacuum and stable over time. The sensor also comprises means 16 for measuring the displacement of the beam around the Y axis, which makes it possible to trace back to the difference this pressure P1-P2. The measuring means are offset relative to the membranes. In the example shown, the measuring means are formed by two suspended strain gages 20 located on either side of the beam 8.
    [0011] A gauge 20 is suspended between an anchor pad 22 and a Y axis element 23.1 aligned with the torsion beams 10.1, 10.2, projecting from a side edge of the beam. The other gauge 20 is suspended between an anchor pad and electrical contact 22 and a Y axis element 23.2 aligned with the torsion beams 10.1, 10.2, projecting from the other side edge of the beam 8. The elements 23.1, 23.2 are fixed relative to the beam 8 so that the rotation of the beam 8 corresponds to that of the elements. Electrical contacts 25 are advantageously in the anchor pads for feeding the strain gauges. Alternatively, one could consider making separate electrical contacts anchor pads and making a connection between the electrical contacts and the gauges. In the example shown, the electrical contact 25 is formed on the rear face of the substrate 2. It corresponds to the contact pads 22, 16, 18. In order to simplify the representation, it is shifted. But it is in practice carried out in line with each of the electrical contacts of the sensor. The electrical contact on the back and is a through or via contact or TSV (Through Silicon Vias in English terminology). During the pivoting of the beam 8 about the Y axis, the strain gauges 20 are deformed. The beam transforms the differential deflection of the membranes into a strain on the gauges. The differential deflection is amplified thanks to the beam forming a lever arm. The constraint amplified by the beam 8 then applies to the longitudinal ends of the gauges The bending stiffness of the beam out of the plane of the substrate of the beam 8 is preferably at least 10 times greater than the stiffness in compression of the gauges, which avoids a deformation of the beam and a reduction of the deformation transmitted to the beam. In the example shown, the gauges 20 are disposed on either side of the axis of rotation Y and the beam 8. The measuring means may comprise only one strain gauge. The implementation of two strain gauges makes it possible to perform differential measurements, making the device less sensitive to external variations, for example temperature variations. Advantageously, the gauge or gauges have a nanometric section, which allows to have a higher concentration of stress and therefore increased sensitivity. In FIGS. 1A and 1B, the strain gauges are of the piezoresistive type. The variation in resistance due to the stress applied to them makes it possible to deduce the displacement of the beam around the Y axis and therefore the pressure difference P1-P2. The gauges are oriented so that their sensitive axis is substantially parallel to the beam and therefore it is substantially orthogonal to the axis of rotation of the link arm. They are advantageously arranged as close as possible to the axis of rotation Y so that the axis of rotation Y is close to the point of application of the stress on the gauges. Indeed, the amplification of the constraint by the lever arm is all the more important that the axis of rotation is close to the point of application of the stress on the gauge Furthermore, the neutral line of each gauge is arranged above or below the axis of rotation of the transmission arm. For this the gauges may have a thickness less than that of the torsion beam and / or bending. For example, to obtain this lower thickness from the same layers, it is possible to deposit an excess thickness on said beams. In FIGS. 1C and 1D, examples shown diagrammatically of resonant type strain gages can be seen.
    [0012] In FIG. 1C, the resonant gauge 120 is suspended between the torsion beam 10.1 and the anchoring pad 22 forming an electrical contact. An excitation electrode 24 is provided along a side of the resonant gauge 120 to vibrate it. Piezoresistive measuring means of the vibration of the resonant gauge 120 are provided. This is in the example shown a piezoresistive gauge 26 suspended between the resonant gauge 120 and an anchor pad 28 advantageously comprising an electrical contact. The excitation electrode vibrates the resonant gauge 120 and the variation of the vibration frequency due to the stress that is applied to the resonant gauge 120 is measured by the piezoresistive gauge 26. In FIG. variation of the vibration frequency of the resonant gauge 220 is performed capacitively. The measuring means comprise an excitation electrode 24 and a detection electrode 30 forming with the resonant gauge 220 a capacitor with variable capacitance. The measurement of the capacitance variation is a function of the vibration frequency variation of the resonant beam 220 which depends on the stress applied to it. We will now explain the operation of the pressure measuring sensor of Figures lA and 18.
    [0013] When a pressure difference appears between the face 4.2 of the membrane 4 and the face 6.2 of the membrane 6, a force F1 is applied to the end 8.1 of the beam, proportional to the pressure P 1, and a force F 2 applies to the end 8.2 of the beam proportional to the pressure P2. Considering that the forces are of different intensities but of the same direction, for example towards the inside of the reference pressure cavity, the beam 8 switches around the Y axis. If P1 is greater than P2, the beam pivots. counterclockwise and if the P2 is greater than P1, the beam pivots clockwise. This tilting has the effect of applying a stress to the strain gauges 20, 20. This stress is amplified because of the lever arm effect. The stress experienced by the gauges 20, 20 is then measured with the means described above. These measurements then make it possible to determine the pressure difference between P1 and P2.
    [0014] In the case where the reference pressure is the same for both membranes, the differential pressure measuring sensor can directly provide the differential pressure P1-P2. The differential pressure measuring sensor makes it possible to measure pressure differences that the pressures P1 and P2 are greater than or less than or equal to PREF. The amplification of the constraint by the lever arm will be all the more important that the length of the arm between the point of application of the force by the membranes and the axis of rotation Y will be large, that the axis of rotation will be close to the point of application of the stress on the gauges. The stress will be even higher as the section of the gauges (thickness, width) will be small. Thus, the sensitivity of the sensor is increased. It is therefore possible to offer better sensors or to reduce the size of the sensors, for example by reducing the surface of the membranes, while maintaining the same performance. FIGS. 2A and 2B show another embodiment of a differential pressure measuring sensor in which the detection is of the capacitive type. These means are offset with respect to the membranes. This sensor differs from that of FIGS. 1A and 1B, in that the measuring means 316 are of the capacitive type. Preferably, it is a differential measurement. For this, a capacitor with variable capacity is provided on each arm of the beam 8 on either side of the axis of rotation Y, providing two capacitance measurements. The beam 8 carries a movable electrode 318 common to the two capacitors with differential capacitances; two fixed electrodes 320 (shown in dotted lines) are provided on the substrate facing the movable electrode 318 on the two arms of the beam. Each fixed electrode is connected to an electrical contact 322 connected to a source of polarization and the contact of the moving electrode 318 is made via the contact of the beam, for example at the level of the embedding of the torsion axis (stud 18 in Figure 1A). The movable electrodes 318 have an out-of-plane displacement and deviate or move closer to the fixed electrodes 320.
    [0015] Advantageously, the movable electrode 318 is disposed at the longitudinal end 8.1, 8.2 of the beam 8 furthest from the axis Y in order to have a displacement of the moving electrode with respect to the increased fixed electrode and thus a increased measuring sensitivity. As a variant, it would be possible to provide a single capacitor with variable capacitance on one or the other of the arms. The amplification of the displacement of the moving electrode (relative to the fixed electrode) by the lever arm will be all the more important as: - the length of the arm between the point of application of the force by the membrane and the axis of rotation is small, - the moving electrode is remote from the axis of rotation Y. In this example, the beam is secured to the membranes in an intermediate zone between the axis of rotation Y and the longitudinal ends 8.1, 8.2. When the membranes 4, 6 are deformed, the beam carries with it the moving electrodes, which move relative to the fixed electrodes. The gap distance between the electrode pairs varies, each gap variation is representative of the differential stress applied by the membranes and therefore the pressure difference P1-P2. In the case of a capacitive detection, the realization of a differential measurement is easy.
    [0016] Thanks to the implementation of the beam 8, the movement of the mobile electrode or electrodes can be amplified relative to that of the membranes 4, 6 Thus, for a given pressure difference, the capacity variation is increased. The sensitivity of the differential pressure measuring sensor is thus increased.
    [0017] Advantageously, the capacitance capacitor or capacitors can also be used as actuating means for performing a "self-test" or a self-calibration of the sensor. The use of these electrodes can also be used to enslave the membranes in position and to allow a measurement mode in slaved mode. This type of actuation ("autotest" function, servocontrol) can advantageously be coupled to the piezoresistive detection mode described above. In Figure 6, we can see an alternative embodiment of the pivot connection 10, wherein the pivot connection 410 is made by means of beams working in bending. For this, the beam has a recess 412 in the area where the pivot connection is to be made. The recess forms a window having two opposite edges 412.1, 412.2 perpendicular to the axis X. Two beams 410.1, 410.2 substantially aligned along the axis X connect a mounting pad 414 to the two edges 412.1, 412.2. The beams 410.1, 410.2 are dimensioned so that the axis of rotation Y is on the anchor block. The beam 8 comprises two lateral projections 423.1, 423.2 aligned with the axis Y to which are suspended strain gauges 420 measuring means. The piezoresistive or resonant measuring means are similar to those described in relation to FIGS. 1A to 1D. More than two bending beams, for example four can be implemented. In addition, this bending beam connection can be applied to a sensor with capacitive detection. FIG. 3 shows an exemplary embodiment of a differential pressure measuring sensor which differs from the examples of FIGS. 1A to 1D and 2A and 2B in that it advantageously comprises a flexible articulation 32 between the membranes 4, 6 and the beam 8. This joint is of the spring type or flexural beam. In FIG. 3 it is a flexural beam 34 which makes it possible to transmit the force entirely along a Z axis orthogonal to the X and Y axes induced by the deformation of the membranes, while limiting the stray force along the X axis, ie along the axis of the beam 8 due to this deformation.
    [0018] This connection has a certain flexibility along the X axis so as not to hinder the deformation of the membrane, and a certain rigidity along the Z axis to transmit all the deformation of the membrane to the arm. In Figure 4, we can see an exemplary embodiment of a differential pressure measuring sensor according to the invention providing an asymmetrical configuration. For example, the membrane 4 has a larger area than the membrane 6. In order to compensate for this difference on the beam, the axis of rotation Y is shifted towards the membrane 4, which has the effect of increasing the amplification of the applied force on the membrane 6 and facilitates the processing of measurements. As a variant, the sensor could comprise membranes of different surface and a pivot axis at the center of the beam and conversely membranes of the same surface but an off-axis pivot axis. FIGS. 5A and 5B show another example of a strain gauge detection differential pressure measuring sensor in which mechanical stop means are implemented between the membranes 4, 6 and the cover. The stops 36 serve to limit the displacement of the membranes 4, 6, and therefore that of the beam 8, to protect the strain gauges. In fact, in the event of a pressure shock, the pressure seen by the membranes can leave the measurement range provided for in the construction, and the membranes 4, 6 via the beam 8 can apply a stress greater than the stress that the gauge or gauges. In the example shown, the stops are formed by beams of axis parallel to the X axis and anchored on the substrate, they overlap the membranes 4,6. It is thus possible to simply set the pressure level from which the movement of the membrane and thus of the arm, is limited, by positioning the abutments 36 more or less close to the areas of the membranes having the maximum deformation.
    [0019] It can be envisaged that the stops are above the beam and directly form a stop for the beam, for example in the case where the stops are made directly by the cover 12 or on the cover above the beam. It can be envisaged that a single stop is implemented, for example above the membrane most likely to see a pressure shock. An electrical contact 38 may be added to the anchor pad of the stop in order to control the potential of the stop, for example the stop may be at the potential of the membrane, which makes it possible to avoid the risk of short-circuiting. case of contact of the membrane on the abutment and the risk of parasitic electrostatic attraction of the membrane towards the abutment. Alternatively, it can be envisaged that each stop forms a measurement electrode and / or actuation for the membrane opposite, for example to ensure a self-test function, self-calibration or to ensure a control position in position the beam 8. The enslavement is obtained by applying an electrostatic restoring force counteracting the pressure force exerted on the membranes. The servo-control makes it possible to increase the measurement range, i.e. the maximum pressure difference to be measured, for a given sensor sensitivity. In Figure 5A ', we can see a variant of Figure 5A in which the pivot connection 10' is formed by a single beam 10.2 stressed in torsion. FIG. 9 shows another embodiment of a differential pressure measuring sensor in which each pressure P1, P2 applies to several membranes 4, 6 respectively, the beam 8 being connected to each of the membranes 4 In the example shown, the sensor comprises two sets of four membranes 4, 6 disposed on either side of the Y axis. The four membranes 4 are arranged in pairs on each side of the X axis, and the four membranes 6 are arranged in pairs on each side of the X axis.
    [0020] The beam 8 has two parallel transverse elements 40 on each arm, extending on either side of the beam 14 and connected in the vicinity of their ends to a membrane 4, 6 The deformations of the four membranes 4 apply a force on a arm of the beam 8 and the four membranes 6 apply a force on the other arm of the beam 8. The total surface of four membranes being greater than that of a single membrane, the force applied to the beam, and therefore the gauges is increased. This embodiment is particularly interesting for strain gage sensors, such as piezoresistive or resonant gauges. Thus it is possible to increase the force applied to the beam by summing the forces applied to several membranes. It will be understood that the number of membranes subjected to the pressure P1 and the number of membranes subjected to the pressure P2 may be different from each other. For example, one could provide several small membranes 4 and a single large membrane 6 or vice versa. In FIG. 10, another embodiment of a differential pressure measuring sensor can be seen in which the membranes 4, 6 have a locally increased rigidity in order to reduce the deformation of the membranes 4, 6 in favor of the stresses applied to the beam and the strain gauge or gauges. The sensitivity of the sensor can thus be optimized. In the example shown, the membranes 4 ', 6' are stiffened locally in the zones of high deformation by adding radial extra thicknesses 41, 61 on the membranes 4, 6 having a structure similar to umbrella whales. A honeycomb structure may also be suitable or any other means increasing the rigidity of the membrane. The level of stiffening is chosen to avoid making the sensor too sensitive to acceleration. Only one of the two membranes may have such stiffening means.
    [0021] In Figure 11, we can see an example of integration of a differential pressure measuring sensor according to the invention and an inertial sensor. This integration is made possible by the fact that the differential pressure measuring sensor CP according to the invention can be realized with technologies for producing inertial sensors, such as accelerometers or gyrometers made in surface technology. In FIG. 11, one can see the differential pressure sensor CP (on the left in the representation of FIG. 11) and an inertial sensor C1 (on the right in the representation of FIG. 11) comprising interdigital capacitive combs 42, made in the same substrate as that of the pressure sensor. The inertial sensor could alternatively be of the strain gauge type. In the example shown, the encapsulation of the inertial sensor C1 is obtained by producing a cavity 44 distinct from the cavity 14 of the differential pressure measuring sensor, a sealing bead 46 separating them. It is conceivable to make only one cavity for the two sensors CP and Cl, since it is at a reference pressure. The differential pressure measuring sensor according to the invention implements technologies identical to the manufacturing technologies of micro and nanoelectromechanical inertial sensors with interdigitated combs or suspended strain gages. It is then possible to pool a large part of the existing processes and to co-integrate a differential pressure measuring sensor and one or more micro and nanoelectromechanical systems.
    [0022] In Figures 7A and 7B, we can see an alternative embodiment of the electrical connections. In this variant, the electrical connections are made on the front face by vias 48 (or TSV (Through-Silicon Via) through the cover on the front face of the opposite side with respect to the membranes and not on the rear face through the substrate as for the other examples shown.
    [0023] As for the TSV on the rear face, this variant makes it possible to recover the contacts directly inside the cavity or cavities. In Figures 8A and 8B, we can see another embodiment of the electrical connections in the front face. In this variant, the electrical contacts 52 are made in such a way that they open out of the cavity or cavities. The anchoring pads forming an electric contact 52 are such that they pass under the sealing bead between the substrate 2 and the cover 12. The access to the electrical contacts is then obtained by sawing or etching the cover in line with the electrical contacts. the outside of the cavity or cavities, and the electrical connections can be easily made. These electrical contacts are designated "saw to reveal" in English terminology. Advantageously, the substrate supporting the membranes 4, 6 comprise on the rear face centering spans 76 bordering the access openings to the faces 4.2, 6.2 of the membranes 4, 6 to facilitate the mounting of the connectors 78 to bring pressure on the 4.2, 6.2 faces of the membranes 4, 6 respectively (Figure 12). In Figs. 13A and 13B, examples of assembling the sensor in a housing forming a differential pressure measuring device can be seen.
    [0024] The housing comprises a bottom 54 and a cover 62. In FIG. 13A, the assembly comprises a sensor according to one of the examples described, a bottom 54 on which is fixed the differential pressure measuring sensor. The bottom 54 is provided with two pressure taps 56, 58 which, during mounting of the sensor, are opposite access openings to the membranes 4, 6. The mounting of the sensor on the bottom 54 is sealed so as to isolate the pressure taps 56, 58, this sealing is obtained for example and advantageously, directly by means of a bonding bead or brazing 60 between the bottom and the rear face of the substrate.
    [0025] The cover 62 is sealed on the bottom to protect the sensor. An electrical contact 64 is made through the bottom and is connected for example by a connection wire to a contact made on the front face of the TSV type. The mounting of the cover on the bottom can in this example not be waterproof.
    [0026] In FIG. 13B, the differential pressure measuring device comprises a pressure tap 66 in the bottom 54 and another pressure tap 68 in the cover 70. When mounting the sensor on the bottom, only a seal is made around the access opening to the membrane 6 by means of a bead or brazing 74, the membrane 4 seeing the pressure which is shown schematically by the arrows 72. In this embodiment, the mounting of the cover 2 on the bottom 54 is sealed because it is the housing that ensures the supply of the pressure P1 on the membrane 4. Alternatively, a conduit could be attached in the cover 12 and connected the pressure tap 66 to the access opening to the membrane 4, thus making it unnecessary to mount the lid on the hood. For example, the communication between the first membrane 4 and the pressure tap 68 is performed by etching the rear face of the substrate and / or by opening the sensor fixing bead on the bottom. In the case where the passage section left by the opening of the sealing bead is not sufficient to have acceptable pressure drops, it can be expected to provide an additional vent by etching the substrate to increase the total passage section. . It will be understood that the devices of FIGS. 13A and 13B may comprise a sensor with electrical contacts on the rear face or on the front face of the "saw to reveal" type. The variant embodiments have been described considering a piezoresistive strain gauge detection pressure sensor, but the variants of FIGS. 3, 4, 5A, 5B, 6, 7A, 7B, 8A, 8B, 9, 10, 11, 12, 13A, 13B apply to capacitive sensing differential pressure sensors shown in Figs. 2A and 2B and to resonant strain gauge pressure sensors shown in Figs. 1C and 1D. In addition, the different variants can be combined with each other without departing from the scope of the present invention.
    [0027] It will be understood that, in a preferred manner, the differential pressure measuring sensor has a symmetrical structure, in particular membranes, of the beam, in order to simplify the processing of the measurements provided by the measurement means. Thanks to the implementation of two membranes and a rigid connecting element between the two membranes, it is possible to go back to a "true" differential pressure measurement, by canceling the common static pressure. The measurement dynamic is then significantly increased compared to a device using two absolute pressure sensors. The sensor according to the invention combines both the advantages of absolute pressure sensors in which the measuring means are protected and the advantages of relative pressure sensors in terms of measurement dynamics. Moreover, in the case where the reference pressure is a reference vacuum, the thermal drifts are limited. Thanks to the invention, the measuring means are isolated from the external medium, for example there is no more risk of capacity drift or short circuit in the case of capacitive measuring means. The measurement sensor is then more robust and more reliable. In addition, thanks to the connecting beam that can serve as amplification arm; a gain in significant sensitivity is obtained, which makes it possible to produce a better or smaller sensor. In addition, the membranes and the measuring means are decoupled, which allows a separate optimization of these two parts of the sensor.
    [0028] The sensors according to the invention make it possible to make a differential measurement, both in the case of the use of piezoresistive measuring means, capacitive or resonant. This differential measurement makes it possible to increase the signal-to-noise ratio and to limit the thermal sensitivity of the sensor. In the particular case of capacitive measuring means, when the electrostatic gap is defined by a sacrificial layer between each of the membranes and the fixed electrode, it is possible to have a good control thereof. In addition, since the moving electrodes are carried by the connecting beam and the fixed electrodes are carried by the substrate, it is possible to have a volume of the cavity or cavities under high vacuum, offering a large reference volume, so a reference vacuum likely to be more stable and more advanced than those in conventional sensors. In addition, it is easy to provide mechanical stops providing protection in case of overpressure, water hammer ... As already mentioned, this structure is balanced and is insensitive to acceleration The sensor according to the invention provides in in addition to the advantage of being able to make the at least two membranes on the same layer and following the same steps. Membranes with similar or even identical mechanical properties are then obtained. We will now describe an example of a method for producing the strain gauge detection pressure sensor of FIGS. 1A and 1B, using FIGS. 14A to 14H, each figure showing the element in plan view and in FIG. chopped off. The locations of different parts of the pressure sensor, in progress in the various steps shown, are designated by the references of these parts.
    [0029] This is a method of realization in surface technology i.e. by successive deposition and machining of thin layers on a base substrate. It starts from a SOI substrate 100 (Silicon on Insulator) comprising a substrate 101, an oxide layer 103 and a top layer of silicon 102 has a thickness between a few hundred nm and a few um. The oxide layer of the SOI substrate is designated 101. A lithography step is carried out in order to define the strain gauges, the torsion axis, the contour of the membranes 4, 6, the contour of the contact and embedding zones. gauges and the torsion axis and the opening of the contact recovery on the rear face. In FIG. 14A, openings at the contacts of the embedding pads are made, which makes it possible to raise the electrical contacts between the substrate 101 and the active layer 102 during the epitaxial step, following the etching of the oxide in these openings is then etched the silicon layer with stop on the oxide layer 103. The remaining resin is removed. The oxide layer 103 is then etched with a stop on the substrate. The element shown in FIG. 14A is obtained.
    [0030] In a subsequent step, a layer of 5102 106, the thickness of which can be between 1 μm and 3 μm, is deposited. A lithography is then carried out to protect the strain gauges, the membranes 4, 6, and to define the opening of the contact zones and the embedding studs of the gauges and of the torsion axis, and the opening of the zones. anchoring 64 of the beam 8 on the membranes 4, 6. An etching of the layer 106 then occurs stopping on the silicon of the layer 102 and on the silicon 101 of the SOI substrate. The remaining resin is removed. The element thus obtained is visible in FIG. 14B. In a subsequent step, the formation of a monocrystalline or polycrystalline silicon layer 108, for example by epitaxy typically having a thickness of between 1 μm and a few tens of μm, results in an abrasion and a chemical-mechanical polishing of the layer 108 can be realized. The element obtained is visible in FIG. 14C. In a next step, a lithography is carried out on the layer 108 in order to define the opening zone of the membranes 4, 6, and the opening zone of the gauges 20, and to define the connecting beam 8 and the zones contact isolation. The layer 108 is then etched with a stop on the SiO 2 layer 106. The remaining resin is removed. The element obtained is visible in FIG. 14D.
    [0031] In a next step, the connecting beam 8 is released, the torsion axis and the gauges by etching, for example by means of hydrofluoric acid vapor. During this step, the layer 106 is entirely etched as well as part of the SiO 2 layer of the SOI substrate. During this step, the membranes 4, 6 are not yet released. The element obtained is visible in FIG. 14E.
    [0032] In a subsequent step, the cover 12 is sealed under vacuum using a bead 13. In a variant, the seal may for example be eutectic, SDB or anodic in the case of a glass cover, ie without cord, the seal being obtained by direct adhesion of the two surfaces 12 and 108. A cavity 14 is delimited between the cover 12 and the element of Figure 14D. The hood may have been previously prepared. The preparation of the cover may comprise the steps of making a cavity, the deposit of getter, making electrical routes or even an electronic (CMOS cointegration) in the case of eutectic sealing, ...
    [0033] The sealed cavity around the membranes is then formed. The substrate is then thinned, for example by rear-face abrasion or back-grinding and chemical-mechanical polishing. The element obtained is visible in FIG. 14F.
    [0034] In a subsequent step, a metal layer is deposited on the rear face of the substrate in order to make the contact on the rear face. Then, a lithography is performed on this layer to delimit the backface contact and finally an etching of the metal layer is performed.
    [0035] The resin on the remaining metal layer is removed. A new lithography is performed on the rear face to delimit the zone of isolation of the contacts and the opening of the membranes 4, 6 as well as etching of the substrate on the rear face, for example by deep etching by reactive ions or DRIE ("deep reactive-ion etching "in English) with a stop on the oxide layer 103 of the SOI substrate. The remaining resin is removed. The element obtained is visible in FIG. 14G. Finally, etching is carried out on the rear face of the oxide layer 103 of the SOI substrate. The membranes are released. The element obtained is visible in FIG. 14H.
    [0036] As a variant, it is conceivable to use, in place of a SOI substrate, a standard substrate on which a deposit of a sacrificial layer, for example an oxide layer, has been made, as well as a deposit of a first layer of polysilicon or SiGe-Poly. The following steps are similar to those described starting from an SOI substrate.
    [0037] Thickness values are given by way of example only. In general, the sacrificial layers (oxide) are between a few tens of nm and a few microns, and the active layers, such as Si, SiGe, ... are between a few tens of nm and a few tens of lm .
    [0038] The pressure sensor according to the invention can be used in all areas where a differential pressure measurement is required, for example in the medical field, to determine the respiratory or gas exchanges. It can also be used in the field of HVAC to control airflow. Thanks to an artificial constriction in the flow line, made for example by means of a laminar element or a diaphragm, it is possible to obtain a pressure drop indicative of the flow rate. Differential pressure sensors measure the pressure upstream and downstream of the element. The sensor according to the invention can also be used in an industrial or automotive or avionic environment: for filter monitoring, for example using the control principle to control the air flow in climatic engineering. If the filter becomes clogged over time, it provides greater resistance to the passage of the flow, and the pressure difference across the filter increases. Differential pressure sensors can measure this pressure difference and trigger alarms as soon as critical values are reached.
    [0039] From: BREVALEX GRENOBLE, - To: lnoi Paris 29/09/201443
    权利要求:
    Claims (22)
    [0001]
    REVENDICATIONS1. MEMS and / or NEMS differential pressure measuring sensor comprising at least a first membrane (4) and at least a second membrane (6), each (4, 6) suspended on a substrate
    [0002]
    2), the first membrane (4) having a face (4.1) subjected to a reference pressure and a second face (4.2) subjected to a first pressure to be detected, the second membrane (6) having a first face (6.1) subjected to at the reference pressure and a second face (6.2) subjected to a second pressure to be detected, a rigid beam (8) with a longitudinal axis (X) articulated with respect to the substrate by a pivot connection about an axis (Y) , said beam (8) being in contact by a first zone with the first membrane (4) and by a second zone with the second membrane (6) so that the pivot connection is between the first zone and the second zone of the beam (8), means (16) for measuring the displacement of the beam (8) around the axis (Y), said measuring means being arranged at least partly on the substrate. 2. Pressure measuring sensor according to claim 1, comprising a cover (12) defining with the substrate on the side of the first faces of a first (4) and second (6) membranes at least one sealed cavity (14).
    [0003]
    3. Pressure measuring sensor according to claim 2, wherein the measuring means (16) are arranged in the at least one hermetic cavity (14).
    [0004]
    A pressure measuring sensor according to one of claims 1 to 3, wherein the axis of rotation (Y) is at the center of the beam (8) and the first and second contact areas between the beam (8). ) and the first (4) and second (6) membranes respectively are at equal distances from the axis of rotation (Y).
    [0005]
    5. The pressure measuring sensor according to one of claims 1 to 4, wherein the contact between the beam and the membranes takes place in the vicinity of the center of the membranes.
    [0006]
    6. The pressure measuring sensor according to one of claims 1 to 5, wherein the beam is secured to the first and second membranes by the first and second areas respectively.
    [0007]
    7. Pressure measurement sensor according to one of claims 1 to 6, wherein the beam (8) is secured to the first (4) and / or the second (6) membrane by a flexible connection along the longitudinal axis. (X) of the beam and rigid along an axis (Z) of deformation of the first (4) and / or the second (6) membrane.
    [0008]
    8. Differential pressure measuring sensor according to one of claims 1 to 7, wherein the pivot connection is formed by at least one beam parallel to the axis of rotation (Y) and urged torsion.
    [0009]
    9. Differential pressure measuring sensor according to one of claims 1 to 8, wherein the pivot connection is formed by at least one beam parallel to the longitudinal axis (X) and biased bending.
    [0010]
    10. Differential pressure measuring sensor according to one of claims 1 to 9, comprising means for stiffening the first membrane and / or the second membrane, for example formed by zones of extra thickness on the first membrane (4) and / or the second (6) membrane, for example arranged radially or honeycomb.
    [0011]
    11. Differential pressure measuring sensor according to one of claims 1 to 10, comprising at least one stop disposed opposite the first membrane (4) and / or the second membrane (6), opposite the face of the first membrane (4) and / or the second membrane (6) subjected to the pressure to be detected so as to limit the deformation of the first membrane (4) and / or the second membrane (6).
    [0012]
    12. Differential pressure measuring sensor according to claim 11, wherein said stop is connected to an electrical connection.
    [0013]
    13. Differential pressure measuring sensor according to one of claims there 12, wherein the measuring means (16) comprise at least one suspended strain gauge (20) connected at one end to the substrate by an anchor pad ( 22) and secured to the beam (8) in the vicinity of the axis of rotation (Y) so that a rotational displacement of the beam (8) about the axis of rotation (Y) applies a constraint to said gauge, said gauge having an axis disposed below or above the pivot axis.
    [0014]
    14. Differential pressure measuring sensor according to claim 13, wherein the measuring means (16) comprise two strain gauges (20) on either side of the longitudinal axis (X) of the beam (8). .
    [0015]
    A differential pressure measuring sensor according to claim 13 or 14, wherein the one or more strain gauges (20) is or are piezoresistive gauges.
    [0016]
    16. Differential pressure measuring sensor according to claim 13 or 14, wherein the strain gauge or strain gauges is or are resonant gauges and wherein the measuring means comprise means for exciting the resonator gage (s) and means measuring the vibration variation of the resonant gage (s).
    [0017]
    17. Differential pressure measuring sensor according to one of claims 1 to 12, wherein measuring means are capacitive measuring means.
    [0018]
    18. Differential pressure measuring sensor according to claim 17, wherein the capacitive measuring means comprise two pairs of electrodes, a first pair comprising a fixed electrode and a moving electrode opposite, the moving electrode being carried by the beam. , and a second pair comprising a fixed electrode and a moving electrode opposite, the moving electrode being carried by the beam in an area opposite to the zone carrying the movable electrode of the first pair with respect to the axis of rotation ( Y).
    [0019]
    19. Differential pressure measuring sensor according to claim 11 and claim 17, wherein the capacitive measuring means comprise two pairs of electrodes, a first pair comprising a fixed electrode and a moving electrode opposite, the moving electrode being carried by the first membrane and the fixed electrode being carried by an abutment facing the first membrane, and a second pair comprising a fixed electrode and a moving electrode opposite, the movable electrode being carried by the second membrane and the fixed electrode being carried by the abutment facing the second membrane.
    [0020]
    20. Differential pressure measuring sensor according to one of claims 1 to 19, wherein one or more electrical contacts (54) are formed partly in the cavity or cavities (14) and partly outside the or the cavities, and wherein one or more electrical connections are connected to the (x) electrical contacts outside the cavity or cavities.
    [0021]
    21. MEMS and / or NEMS assembly comprising at least one differential pressure measuring sensor according to one of claims 1 to 20 and at least one inertial sensor made on and in the same substrate.
    [0022]
    22. Differential pressure measuring device comprising at least one differential pressure measuring sensor according to one of claims 1 to 20 and a housing in which is mounted the differential pressure measuring sensor, said housing comprising two separate pressure taps. each connecting to said differential pressure measuring sensor so that a pressure tap opens on the second side of the first membrane and the other pressure tap opens on the second side of the second membrane.
    类似技术:
    公开号 | 公开日 | 专利标题
    EP2921836A1|2015-09-23|Sensor for measuring microelectromechanical and/or nanoelectromechanical differential pressure
    EP2541222B1|2018-02-21|Pressure-measurement device with optimised sensitivity
    EP2367015B1|2014-04-23|Force sensor with reduced noise
    EP2211185B1|2014-03-19|Inertial sensor unit or resonant sensor with surface technology, with out-of-plane detection by strain gauge
    EP2211143B1|2018-08-08|Micromachined planar gyrometer with an out-of-plane detection by strain gauge
    EP2065713B1|2010-08-11|Detection device with a hanging piezoresistive strain gauge comprising a strain amplification cell
    FR2917731A1|2008-12-26|DEVICE RESONANT TO PIEZORESISTIVE DETECTION REALIZED IN SURFACE TECHNOLOGIES
    EP2520900B1|2013-12-18|Gyroscope with reduced parasitic capacitance
    EP2815210B1|2017-11-29|Compact dection device for at least one acceleration and one rotational speed
    EP2656006B1|2015-07-01|Planar structure for a triaxial gyrometer
    EP2949621B1|2016-11-09|Capacitive micro and/ or nanoelectronic device having increased compactness
    EP2702275A1|2014-03-05|Micropump having a flowmeter, and method for producing same
    EP3766830A1|2021-01-20|Mechanical link for mechanical mems and nems structure, and mems and nems structure comprising such a mechanical link
    EP3766829A1|2021-01-20|Mechanical link for mems and nems device for measuring a pressure variation and device comprising such a mechanical link
    EP3234536B1|2022-01-05|Dynamic pressure sensor with improved operation
    WO2018104656A1|2018-06-14|Device for transmitting a movement and a force between two zones that are insulated from one another
    EP3217181A1|2017-09-13|Damped linear accelerometer
    EP3599469A1|2020-01-29|Accelerometer with detection by strain gauge with improved precision
    FR3067708B1|2019-07-05|MICROELECTROMECHANICAL DEVICE HAVING AT LEAST ONE MOBILE ELEMENT GUIDE IN TRANSLATION
    WO2021130280A1|2021-07-01|Autonomous membrane sensor
    FR3031639A1|2016-07-15|ELECTROMECHANICAL TRANSDUCER INTEGRATING A DEFORMABLE ELEMENT OF RESONATOR OR MEMBRANE TYPE, AND MEASUREMENT SENSOR INTEGRATING SUCH TRANSDUCER
    FR3024872A1|2016-02-19|MICROELECTROMECHANICAL DEVICE HAVING SENSITIVITY TO OUTSTANDING MECHANICAL SOLICITATION
    同族专利:
    公开号 | 公开日
    EP2921836A1|2015-09-23|
    US9528895B2|2016-12-27|
    US20150268115A1|2015-09-24|
    FR3018916B1|2017-08-25|
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    JPS57142534A|1981-02-27|1982-09-03|Yokogawa Hokushin Electric Corp|Transmitting device for pressure difference|
    DE19740244A1|1997-09-12|1998-02-26|Klaus Prof Dr Ing Bethe|Thin film differential pressure sensor unaffected by acceleration|
    US20090120195A1|2007-11-08|2009-05-14|Willcox Charles R|Pressure sensor|
    US20130000411A1|2011-07-01|2013-01-03|Commissariat A L'energie Atomique Et Aux Ene Alt|Pressure measurement device having an optimized sensitivity|
    US7047814B2|2001-07-17|2006-05-23|Redwood Microsystems, Inc.|Micro-electromechanical sensor|
    JP4332859B2|2007-04-27|2009-09-16|エプソントヨコム株式会社|Pressure sensor|
    FR2951826B1|2009-10-23|2012-06-15|Commissariat Energie Atomique|SENSOR WITH PIEZORESISTIVE DETECTION IN THE PLAN|
    FR2954505B1|2009-12-22|2012-08-03|Commissariat Energie Atomique|MICROMECHANICAL STRUCTURE COMPRISING A MOBILE PART HAVING STOPS FOR OFFLINE SHIFTS OF THE STRUCTURE AND METHOD FOR CARRYING OUT THE SAME|
    FR2974895B1|2011-05-02|2013-06-28|Commissariat Energie Atomique|GYROMETER WITH REDUCED CAPACITY PARASITES|
    FR2983844B1|2011-12-12|2014-08-08|Commissariat Energie Atomique|PIVOT MECHANICAL BONDING FOR MEMS AND NEMS MECHANICAL STRUCTURES|
    FR2985602B1|2012-01-05|2014-03-07|Commissariat Energie Atomique|METHOD FOR ETCHING A COMPLEX PATTERN|
    US9290067B2|2012-08-30|2016-03-22|Freescale Semiconductor, Inc.|Pressure sensor with differential capacitive output|
    FR2995690B1|2012-09-19|2015-04-10|Commissariat Energie Atomique|THERMAL FLOW SENSOR WITH VIBRATION ELEMENT AND GAS SENSOR COMPRISING AT LEAST ONE SUCH SENSOR|
    FR3000354B1|2012-12-20|2015-01-30|Commissariat Energie Atomique|MEMBRANE DEVICE WITH CONTROLLED DISPLACEMENT|
    FR3005045A1|2013-04-25|2014-10-31|Commissariat Energie Atomique|MICROELECTROMECHANICAL AND / OR NANOELECTROMECHANICAL STRUCTURE WITH ADJUSTABLE QUALITY FACTOR|
    EP2806258B1|2013-05-20|2018-09-12|ams international AG|Differential pressure sensor|
    FR3008965B1|2013-07-26|2017-03-03|Commissariat Energie Atomique|ENCAPSULATION STRUCTURE COMPRISING A MECHANICALLY REINFORCED HOOD AND GETTER EFFECT|
    US10291200B2|2014-07-02|2019-05-14|The Royal Institution For The Advancement Of Learning / Mcgill University|Methods and devices for microelectromechanical resonators|EP2871455B1|2013-11-06|2020-03-04|Invensense, Inc.|Pressure sensor|
    EP2871456B1|2013-11-06|2018-10-10|Invensense, Inc.|Pressure sensor and method for manufacturing a pressure sensor|
    GB201412246D0|2014-05-15|2014-08-20|Continental Automotive Systems|Pressure sensor device with high sensitivity and high accuracy|
    FR3021814B1|2014-08-08|2018-06-15|Commissariat Energie Atomique|CONNECTOR FOR THE MATRIX CONNECTION BETWEEN A HOUSING AND A SUPPORT COMPRISING A MAIN BODY|
    CN107076630A|2014-09-03|2017-08-18|韩国株式会社科迈特|Differential pressure pick-up|
    EP3614115A1|2015-04-02|2020-02-26|InvenSense, Inc.|Pressure sensor|
    JP6430355B2|2015-10-16|2018-11-28|株式会社東芝|Sensor device|
    EP3387402B1|2015-12-07|2021-04-07|EILERSEN, Nils Aage Juul|Load cell|
    DE102016210479A1|2016-06-14|2017-12-14|Robert Bosch Gmbh|Micromechanical component for a pressure sensor device|
    IT201600121210A1|2016-11-30|2018-05-30|St Microelectronics Srl|MULTI-DEVICE TRANSDUCTION MODULE, ELECTRONIC EQUIPMENT INCLUDING THE TRANSDUCTION FORM AND METHOD OF MANUFACTURING THE TRANSDUCTION MODULE|
    FR3059659B1|2016-12-07|2019-05-17|Commissariat A L'energie Atomique Et Aux Energies Alternatives|DEVICE FOR TRANSMITTING MOVEMENT AND FORCE BETWEEN TWO ZONES ISOLATED FROM EACH OTHER|
    US10436661B2|2016-12-19|2019-10-08|Sporian Microsystems, Inc.|Heat resistant sensors for very high temperature conditions|
    DE102017200057A1|2017-01-04|2018-07-05|Robert Bosch Gmbh|Linearized micromechanical sensor|
    US11225409B2|2018-09-17|2022-01-18|Invensense, Inc.|Sensor with integrated heater|
    WO2021005394A1|2019-07-09|2021-01-14|Commissariat A L'energie Atomique Et Aux Energies Alternatives|Pressure measurement sensor and manufacturing process of a differential pressure measurement sensor|
    CN111238714B|2020-02-19|2021-12-07|黑龙江大学|Manufacturing process method of micro-pressure sensor|
    CN113465791A|2021-06-17|2021-10-01|西安交通大学|Resonant pressure sensor and preparation method thereof|
    法律状态:
    2016-03-31| PLFP| Fee payment|Year of fee payment: 3 |
    2017-03-31| PLFP| Fee payment|Year of fee payment: 4 |
    2018-03-29| PLFP| Fee payment|Year of fee payment: 5 |
    2020-03-31| PLFP| Fee payment|Year of fee payment: 7 |
    2021-03-30| PLFP| Fee payment|Year of fee payment: 8 |
    优先权:
    申请号 | 申请日 | 专利标题
    FR1452288A|FR3018916B1|2014-03-19|2014-03-19|MICROELECTROMECHANICAL AND / OR NANOELECTROMECHANICAL DIFFERENTIAL PRESSURE MEASURING SENSOR|FR1452288A| FR3018916B1|2014-03-19|2014-03-19|MICROELECTROMECHANICAL AND / OR NANOELECTROMECHANICAL DIFFERENTIAL PRESSURE MEASURING SENSOR|
    US14/661,430| US9528895B2|2014-03-19|2015-03-18|Microelectromechanical and/or nanoelectromechanical differential pressure measurement sensor|
    EP15159675.6A| EP2921836A1|2014-03-19|2015-03-18|Sensor for measuring microelectromechanical and/or nanoelectromechanical differential pressure|
    [返回顶部]